Phosphor vacancy induced intermixing in InGaAsP quantum well structures was reported. DBR laser using self-aligned SiO2grating and it induced quantum well intermixing is proposed.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Phosphor vacancy induced quantum well intermixing and its application in DBR laser using SiO2grating


    Beteiligte:
    Teng, J.H. (Autor:in) / Dong, J.R. (Autor:in) / Chua, S.J. (Autor:in) / Foo, B.S. (Autor:in) / Lai, M.Y. (Autor:in) / Yin, R. (Autor:in) / Wang, Y.J. (Autor:in) / Ang, S.S. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    204441 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Stripe-size Dependent Quantum Well Intermixing Induced by Impurity-free Vacancy Disordering

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    Laser Induced Quantum Well Intermixing for Optoelectronic Devices

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    A numerical study of spatially controlled impurity-free vacancy-enhanced quantum well Intermixing

    Wong, Y. H. / Chan, K. S. / Pun, E. Y. B. et al. | British Library Conference Proceedings | 1998