A 1.2 /spl mu/m band densely packed VCSEL array with highly strained GaInAs/GaAs QWs with spatial spacing of 20 /spl mu/m and wavelength spacing of 0.1 nm is demonstrated for the first time. A large number of VCSELs of over 100 elements could be integrated in a 2 mm long bar.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    1.2 /spl mu/m band high-density multiple-wavelength vertical cavity surface emitting laser array


    Beteiligte:
    Uchiyama, Y. (Autor:in) / Kondo, T. (Autor:in) / Takeda, K. (Autor:in) / Matsutani, A. (Autor:in) / Hashizume, J. (Autor:in) / Tajeshi, U. (Autor:in) / Miyamoto, T. (Autor:in) / Koyama, F. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    125396 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    1.2 mum Band High-density Multiple-wavelength Vertical Cavity Surface Emitting Laser Array

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004




    Multiple-wavelength Vertical-cavity Surface-emitting Laser Arrays

    Yuen, W. / Li, G. S. / Chang-Hasnain, C. J. et al. | British Library Conference Proceedings | 1997


    Fabrication of Multiple Wavelength Vertical-Cavity Surface-Emitting Laser Array Using Flip-Chip Bonding

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994