In this paper, we propose a novel potential-tailored quantum well which we believe is the simplest and can easily be fabricated by molecular beam epitaxy (MBE). We show theoretically that polarization dependence of MQW-EA (multiple quantum well electroabsorption) modulators can be drastically reduced by this new quantum well. All quantum wells in this paper consist of 0.4%-tensile-strained-InGaAs wells and lattice-matched-InAlAs barriers on InP since the tensile strain helps achieving the polarization independent operation in this work.


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    Titel :

    The simplest potential-tailored quantum well for polarization-independent optical modulators


    Beteiligte:
    Kato, M. (Autor:in) / Tada, K. (Autor:in) / Nakano, Y. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    175539 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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