High-speed operation of InGaAs/InGaAsP strained-layer MQW lasers has been achieved at 70 /spl deg/C under zero-bias condition by optimizing the SCH structure.
High-speed operation of strained InGaAs/InGaAsP MQW lasers
1992-01-01
167064 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
High-Speed Operation of Strained InGaAs/InGaAsP MQW Lasers
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