We demonstrate noncontact measurements of electrical properties of GaN thin films using the time domain spectroscopy in the THz frequency region (THz-TDS). The carrier density and temperature dependence of DC resistivity and mobility of the GaN films are investigated.
Electrical characterization of GaN thin films using terahertz-time domain spectroscopy
2002-01-01
134879 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Electrical Characterization of GaN Thin Films Using Terahertz-Time Domain Spectroscopy
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