Low-cost long-wavelength lasers operating at high temperatures without cooling systems are required for optical subscriber systems. A quantum-well active layer with a large conduction discontinuity is thought to be effective for improving high-temperature characteristics of long-wavelength lasers. In this paper, we report on gas-source MBE growth conditions, and the fabrication process and lasing properties of these newly developed InAsP/InAlGaAs laser diodes with high-temperature characteristics.


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    Titel :

    InAsP/InAlGaAs lasers for high T/sub 0/ operation


    Beteiligte:
    Anan, T. (Autor:in) / Yamada, M. (Autor:in) / Tokutome, K. (Autor:in) / Sugou, S. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    182608 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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