MBE grown self-organised InAs QDs on GaAs (100) and (n11) substrates have been investigated by AFM and PL. The results show that substrate orientations have a strong effect on the properties of QDs. The dependence of PL for different oriented substrates has been examined. It was found that, by reducing the strain and quantum confinement in InAs QDs, long-wavelength PL emission was obtained.
Influence of substrate orientation on self-assembled InAs/GaAs quantum dots for long wavelength emission grown by molecular beam epitaxy
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; 2 ; 616-617 vol.2
2002-01-01
151446 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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