This paper presents a high performance Double Side Cooled (DSC) module based on trench Silicon Carbide (SiC) MOSFETs. The module thermal stack is optimized to reach a superior thermal performance and thereby, a high current density. The stray inductance of the module is minimized to allow the usage of a lower breakdown voltage semiconductor, allowing for further optimization of its conduction performance. The module is experimentally characterized, and compared with a Silicon- (Si) based Module to evaluate the efficiency benefits of SiC at the inverter level.


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    Titel :

    Characteristics of a SiC MOSFET-based Double Side Cooled High Performance Power Module for Automotive Traction Inverter Applications


    Beteiligte:
    Pai, Ajay Poonjal (Autor:in) / Ebli, Michael (Autor:in) / Simmet, Tobias (Autor:in) / Lis, Adrian (Autor:in) / Beninger-Bina, Markus (Autor:in)


    Erscheinungsdatum :

    15.06.2022


    Format / Umfang :

    2622339 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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