The frequency response of PIN diodes was analyzed by Read (1958). Starting with one of Maxwell's equations it was shown that the small-signal frequency response of the diode should exhibit a phase delay and amplitude roll-off due to the time T=L/v required for charge carriers to drift across the intrinsic layer of thickness L (v is the effective carrier velocity). This so-called transit time effect implies a two-pole frequency response: one pole for the transit time and a second for the RC time constant. In reality this analysis has little to do with the bandwidth of high speed PIN photodetectors. In order to explain experimental results we must turn to a far simpler argument that relates the carrier transit time to the internal resistance of the photodiode. The elementary theory predicts the observed single-pole response of PIN detectors, it anticipates correctly the relationship between the bandwidth and the load resistance, and forces us to include in the detector equivalent circuit the resistance R/sub int/=T/(2C), where C=/spl epsi/A/L is the diode capacitance; /spl epsi/ is the dielectric constant and A is the junction area.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Internal resistance and carrier transit time in PIN photodetectors


    Beteiligte:
    Flynn, E.J. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    133901 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Internal Resistance and Carrier Transit Time in PIN Photodetectors

    IEEE | British Library Conference Proceedings | 1999


    Enhanced Electron Transit Time in Pinned-Buried Photodetectors

    Kundu, T. / Jarwal, R. K. / Misra, D. | British Library Conference Proceedings | 2002


    Transit-time limited response from low capacitance CMOS photodetectors

    Bhatnagar, A. / Latif, S. / Miller, D.A.B. | IEEE | 2004


    Effect of carrier transit time on the bandwidth of traveling-wave photodetector

    Moon, Y. T. / Choi, W. K. / Kim, D. G. et al. | British Library Online Contents | 2007