Continuous-wave (CW) light output powers of 87 mW at room temperature and 30 mW at 60/spl deg/C have been obtained for ZnCdSe/ZnSSe/ZnMgSSe single quantum-well (SQW) separate-confinement heterostructure (SCH) laser diodes grown on a GaAs substrate by molecular beam epitaxy (MBE).


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    Titel :

    High-power continuous-wave operation of 512-nm ZnCdSe/ZnSSe/ZnMgSSe SQW-SCH laser diodes


    Beteiligte:
    Nakayama, N. (Autor:in) / Taniguchi, S. (Autor:in) / Hino, T. (Autor:in) / Nakano, K. (Autor:in) / Ishibashi, A. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    165313 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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