Continuous-wave (CW) light output powers of 87 mW at room temperature and 30 mW at 60/spl deg/C have been obtained for ZnCdSe/ZnSSe/ZnMgSSe single quantum-well (SQW) separate-confinement heterostructure (SCH) laser diodes grown on a GaAs substrate by molecular beam epitaxy (MBE).
High-power continuous-wave operation of 512-nm ZnCdSe/ZnSSe/ZnMgSSe SQW-SCH laser diodes
01.01.1996
165313 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
High Power Continuos-Wave Operation of 512-nm ZnCdSe/ZnSSe/ZnMgSSe SQW-SCH Laser Diodes
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