Continuous-wave (CW) light output powers of 87 mW at room temperature and 30 mW at 60/spl deg/C have been obtained for ZnCdSe/ZnSSe/ZnMgSSe single quantum-well (SQW) separate-confinement heterostructure (SCH) laser diodes grown on a GaAs substrate by molecular beam epitaxy (MBE).


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    High-power continuous-wave operation of 512-nm ZnCdSe/ZnSSe/ZnMgSSe SQW-SCH laser diodes


    Beteiligte:
    Nakayama, N. (Autor:in) / Taniguchi, S. (Autor:in) / Hino, T. (Autor:in) / Nakano, K. (Autor:in) / Ishibashi, A. (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    165313 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    High Power Continuos-Wave Operation of 512-nm ZnCdSe/ZnSSe/ZnMgSSe SQW-SCH Laser Diodes

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    The Growth of ZnMgSSe and Blue Laser Diodes

    Ozawa, M. / Itoh, S. / Okuyama, H. et al. | British Library Online Contents | 1994


    Prediction of Lower Current Threshold in Tensile Strained ZnCdSe/ZnMgSSe Multiple Quantum Well Blue-Green Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Yellow-Green Lasing Emission fron ZnCdSe/BeZnTe II-VI Laser Diodes on InP Substrates

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2002


    Yellow-green lasing emission from ZnCdSe/BeZnTe II-VI laser diodes on InP substrates

    Song-Bek Che, / Nomura, I. / Kikuchi, A. et al. | IEEE | 2002