For organic light-emitting diodes, the higher work-function of heavily doped p-type silicon makes it a potentially more efficient hole-injecting anode than indium-tin oxide. However, it was determined from a systematic set of experiments that while hole injection was indeed achieved, the efficiency was not particularly high and light emission was consistently absent. A most likely explanation was the diffusion of radiation-quenching, conventional dopants of silicon into the organic emission layer. Diffusion was partially blocked by capping silicon with a thin inorganic oxide layer.


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    Titel :

    Investigation of heavily doped silicon as an anode material for top-emitting organic light-emitting diode


    Beteiligte:
    Ka Wah Chan, (Autor:in) / Chi Hoo Wan, (Autor:in) / Hoi Sing Kwok, (Autor:in) / Man Wong, (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    238386 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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