In this paper we report a high power THz transmitter operating at 1 kHz repetition rate. This kHz repetition rate gives a high signal-to-noise ratio, which is essential for quantitative study of high-field semiconductor physics. The transmitter is an undoped GaAs wafer with aluminum electrodes separated by a 3 cm gap. The bias to the antenna is provided by a high voltage pulse generator producing 2 /spl mu/s pulses with a peak voltage of up to 40 kV. The THz antenna is illuminated at normal incidence by 150 fs, 800 nm pulses from a Clark-MXR Ti:Sapphire regenerative laser amplifier system running at 1 kHz.


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    Titel :

    High power terahertz radiation at 1 kHz repetition rate


    Beteiligte:
    Budiarto, E. (Autor:in) / Jeong, S. (Autor:in) / Son, J. (Autor:in) / Margolies, J. (Autor:in) / Boker, J. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    163676 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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