In this paper, we report on the performance of compressive strained quaternary InGaAsP quantum well lasers with record thresholds and compare them to InGaAs tensile strained devices with comparable well width and confinement factor. Equally important, these devices were MOCVD grown with tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) instead of arsine and phosphine.
Low threshold 1.55 /spl mu/m quantum well lasers grown with tertiarybutylarsine and tertiarybutylphosphine
Proceedings of LEOS'94 ; 2 ; 373-374 vol.2
01.01.1994
164179 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Low Threshold 1.55 m Quantum Well Lasers Grown with Tertiarybutylarsine and Tertiarybutylphosphine
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