This paper reports the first mid-infrared ring laser diode based on InAs and grown by liquid phase epitaxy (LPE). Coherent emission for a 200 /spl mu/m ring resonator was obtained near 3.0 /spl mu/m at 80 K. The individual modes exhibit hardly any wavelength shift with increasing injection current. The absence of a significant modal wavelength shift confirms that the emission originates from in-plane propagation around the inside perimeter of the mesa due to a whispering gallery mode which is facilitated by total internal reflection with high Q.


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    Titel :

    Mid-infrared whispering gallery lasers


    Beteiligte:
    Wright, D.A. (Autor:in) / Krier, A. (Autor:in) / Sherstnev, V.V. (Autor:in) / Monakhov, A. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    78486 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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