Multimode interference (MMI) structure is introduced in semiconductor laser to realize higher power and shorter device length. We use BPM simulation in the device design. MMI-LD was fabricated and realized in InGaAsP/InP based material and output power of up to 2.296mW was achieved. The implemented MMI-LD exhibits stable single-mode output operating at a wavelength of 1.52¿m at 10°C. As a comparison, conventional semiconductor laser using straight waveguide is also fabricated in the same wafer and the output power is 0.534mW. MMI-LD also shows better temperature tolerance due to the MMI wavelength selecting function.


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    Titel :

    Semiconductor Laser Using Multimode Interference (MMI) Principle


    Beteiligte:
    Yin, Rui (Autor:in) / Teng, Jinghua (Autor:in) / Lin, Junhong (Autor:in) / Chua, Soojin (Autor:in)


    Erscheinungsdatum :

    01.12.2008


    Format / Umfang :

    443643 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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