Multimode interference (MMI) structure is introduced in semiconductor laser to realize higher power and shorter device length. We use BPM simulation in the device design. MMI-LD was fabricated and realized in InGaAsP/InP based material and output power of up to 2.296mW was achieved. The implemented MMI-LD exhibits stable single-mode output operating at a wavelength of 1.52¿m at 10°C. As a comparison, conventional semiconductor laser using straight waveguide is also fabricated in the same wafer and the output power is 0.534mW. MMI-LD also shows better temperature tolerance due to the MMI wavelength selecting function.
Semiconductor Laser Using Multimode Interference (MMI) Principle
01.12.2008
443643 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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