In conclusion, we have demonstrated the first passively mode-locked GaAs-AlGaAs monolithic semiconductor ring lasers. These devices with a 150-/spl mu/m-radius ring cavity emit a continuous train of transform-limited 1.3 ps lasing pulses at a frequency of 86 GHz. The output power of these devices is up to 10 mW/pulse at the laser output facet. In the future, we expect that this power level can be increased to 1100 mW/pulse by the addition of a waveguide amplifier.<>


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    Titel :

    Passive mode locking of monolithic semiconductor ring lasers


    Beteiligte:
    Hohimer, J.P. (Autor:in) / Vawter, G.A. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    189702 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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