In the present paper, we describe pulse generation by a monolithic semiconductor MLL (M-MLL). In this case, the change of the absorber strength by the absorber voltage offers another way for the reduction of the spectral width and thus the reduction of phase noise. The investigated pulse source is a multi-section buried heterostructure laser having an active and a passive part.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Low noise 400 fs pulse generation by monolithic semiconductor mode-locked laser and soliton pulse compression


    Beteiligte:
    Kroh, M. (Autor:in) / Huttl, B. (Autor:in) / Ferber, S. (Autor:in) / Weber, H.-G. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    906236 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Monolithic additive pulse mode-locked quantum well laser

    Chen, Y.K. / Wu, M.C. / Tanbun-Ek, T. et al. | IEEE | 1992


    Monolithic Additive Pulse Mode-Locked Quantum Well Laser

    Chen, Y. K. / Wu, M. C. / Tanbun-Ek, T. et al. | British Library Conference Proceedings | 1992


    Monolithic Multisegment Mode Locked DBR Laser for Wavelength Tunable Picosecond Pulse Generation

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996



    Generation and stabilization of ultrafast optical pulse trains with monolithic mode-locked laser diodes

    Arahira, S. / Katoh, Y. / Ogawa, Y. | British Library Online Contents | 2001