A simple model of the surface quantum well including spontaneous polarization and piezoelectric effects from the wurtzite material is proposed, and how the energy of the ground state and efficiency of emission can be varied is suggested by controlling the thickness of the capping layer, the thickness of the AlGaN confining layer, and by controlling the fields within the device though doping, or by introducing screening charge from an external excitation source such as a laser. A 1D Poisson solver is used to model the band structure, and Schrodinger's equation is solved numerically to find the bound states of the surface quantum well.


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    Titel :

    Band gap engineering of gallium nitride surface quantum wells


    Beteiligte:
    Zhang, X. (Autor:in) / Cai, A. (Autor:in) / Fothergill, D. (Autor:in) / Muth, J.F. (Autor:in) / Roberts, J.C. (Autor:in) / Rajagopal, P. (Autor:in) / Cook, J.W. (Autor:in) / Finer, E.L. (Autor:in) / Linthicum, K.J. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    218878 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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