The delevelopment of MM-wave solid state devices in China has a history of nearly 30 years. Now many devices have formed a series of products, including mixer diode, detector diode, Gunn diode, varactor diode, IMPATT diode, PIN diode and solid state niose diode etc., with the frequency covering 18 - 110GHz. Units consisting of mm-wave devices, such as mixer, detector, switch, attenuator, multiplier and noise source, have been widely used for various mm-wave systems. Varieties of novel mm-wave devices-GaAS MESFET, HEMT, HBT, BCT and superconducting devices as well as mm-wave MMIC are also being researched actively.


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    Titel :

    Development of mm-wave solid state devices in China (invited)


    Beteiligte:
    Jianting Lin, (Autor:in)


    Erscheinungsdatum :

    1989-01-01


    Format / Umfang :

    136176 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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