An MOVPE-grown VCSEL on GaAs substrate with a GaInNAs active region emitting at 1.3 /spl mu/m with record laser-characteristics and data-transmission rate of 10 Gbit/s has been realized.
MOVPE-grown 1.3 /spl mu/m emitting VCSEL with GaInNAs active region
01.01.2002
137807 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
MOVPE-Grown 1.3 mum Emitting VCSEL with GaInNAs Active Region
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