An MOVPE-grown VCSEL on GaAs substrate with a GaInNAs active region emitting at 1.3 /spl mu/m with record laser-characteristics and data-transmission rate of 10 Gbit/s has been realized.


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    Titel :

    MOVPE-grown 1.3 /spl mu/m emitting VCSEL with GaInNAs active region


    Beteiligte:
    Ramakrishnan, A. (Autor:in) / Steinle, G. (Autor:in) / Supper, D. (Autor:in) / Pfeiffer, J. (Autor:in) / Degen, C. (Autor:in) / Stolz, W. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    137807 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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