This paper provides a brief overview on recent advances in the ultraviolet (UV) photonic materials and devices based upon III-nitrides and the exploitation of chip- level innovation, such as the incorporation of micro- and nano-scale photonic device integration and photonic crystals (PCs), to enhance the extraction efficiency of UV light emitting diodes (LEDs). By inserting a high quality AlN epilayer that serves as a template for the subsequent growth of AlGaN alloys and adopting delta-doping scheme, we have greatly reduced the dislocation density and thereby enhanced the doping efficiency. By incorporating AlN and highly conductive n-AlGaN into the actual device structure, we have significantly improved the performance of deep UV LEDs (/spl lambda/<300 nm). It was shown that III-nitride PCs provide 3 times enhancement in output power and 4 times enhancement in modulation speed in UV LEDs. The demonstration of photonic band-gap (PBG) materials active in the UV and visible wavelengths opens many new applications.


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    Titel :

    IIIinitride ultraviolet micro- and nano-photonics


    Beteiligte:
    Lin, J.Y. (Autor:in) / Jiang, H.X. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    1576600 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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