In order to achieve higher efficiency and greater power density, SiC (silicon carbide) MOSFET is employed to replace Si (silicon) IGBT in many applications. But the high total cost of all-SiC-MOSFET-based converters makes them uneconomical, especially in multilevel converter topologies. In this paper, a high-efficiency and low-cost hybrid three-level (3L) hybrid device (hybrid2) Active Neutral-PointClamped (ANPC) converter is proposed. It consists of four Si active switches and only two Si/SiC hybrid switches. Thus, it has a lower total cost compared to the existing hybrid three-level converters. Furthermore, an optimal modulation strategy and gate driver signal control are derived to reduce the total switching losses. As a result, the proposed converter achieves high efficiency and shows superiority in high-power inverter and rectifier applications with the 600-800-V dc-bus voltage.


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    Titel :

    Investigation of Hybrid Three-Level Hybrid Device (Hybrid2) Active Neutral-Point-Clamped Converter


    Beteiligte:
    Xia, Tianlun (Autor:in) / Wang, Qinsong (Autor:in) / Yang, Huan (Autor:in) / Li, Chushan (Autor:in) / Li, Wuhua (Autor:in) / He, Xiangning (Autor:in)


    Erscheinungsdatum :

    28.10.2022


    Format / Umfang :

    664313 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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