Photonic integrated circuits (PICs), which are attractive for advanced optical-fiber communication systems, consist of various photonic components containing waveguide structures with different bandgap energy (Eg). To fabricate PICs, complicated processes including selective etching of multi-layers and the following growth of various layers have been required. The selective metalorganic vapor phase epitaxy (MOVPE) technique enables directly formed MQW waveguides with in-plane Eg control. Simple fabrication processes without semiconductor etching are desirable for high device uniformity and yield. Using this novel technique, various photonic devices have been successfully demonstrated.<>
Semiconductor photonic integrated circuits with directly formed waveguides using in-plane bandgap energy control by selective MOVPE
Proceedings of LEOS '93 ; 189-190
01.01.1993
190307 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 1993
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