Photonic integrated circuits (PICs), which are attractive for advanced optical-fiber communication systems, consist of various photonic components containing waveguide structures with different bandgap energy (Eg). To fabricate PICs, complicated processes including selective etching of multi-layers and the following growth of various layers have been required. The selective metalorganic vapor phase epitaxy (MOVPE) technique enables directly formed MQW waveguides with in-plane Eg control. Simple fabrication processes without semiconductor etching are desirable for high device uniformity and yield. Using this novel technique, various photonic devices have been successfully demonstrated.<>


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    Titel :

    Semiconductor photonic integrated circuits with directly formed waveguides using in-plane bandgap energy control by selective MOVPE


    Beteiligte:
    Sasaki, T. (Autor:in) / Kitamura, M. (Autor:in) / Mito, I. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    190307 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




    Selective MOVPE growth process for photonic integrated circuits

    Sasaki, T. / Komatsu, K. / Kitamura, M. et al. | IEEE | 1995


    Recent advance on selective MOVPE technique for photonic integrated circuits

    Sasaki, T. / Kudo, K. / Tsuji, M. et al. | IEEE | 1996


    Recent Advance on Selective MOVPE Technique for Photonic Integrated Circuits

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996