In this paper, we demonstrate the growth and characterization of 850 nm oxide-confined VCSELs utilizing In/sub 0.18/Ga/sub 0.82/P/sub 0.2//ln/sub 0.4/Ga/sub 0.6/P strain-compensated SC-MQWs by MOCVD. The VCSELs show very low threshold current good temperature performance, and high modulation response up to 12.5 Gb/s from 25C to 85C.


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    Titel :

    Growth and characterization of 850 nm InGaAsP/InGaP strain-compensated VCSELs by MOCVD


    Beteiligte:
    Kuo, H.C. (Autor:in) / Lu, T.C. (Autor:in) / Chang, Y.S. (Autor:in) / Lai, F.Y. (Autor:in) / Kao, G.C. (Autor:in) / Laih, L.H. (Autor:in) / Wang, S.C. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    79476 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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