Summary form only given. We describe a mid-infrared laser diode active region based on type-II GaInSb/InAs quantum wells. The structure is designed for efficient electrical injection from the barriers. The band structure has been engineered to minimize the deleterious effects prevalent in mid-infrared materials, such as Auger recombination and intersubband absorption.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Mid-infrared laser diode active region based on type-II broken gap quantum wells


    Beteiligte:
    Olesberg, J.T. (Autor:in) / Day, P.S. (Autor:in) / Shaw, E.M. (Autor:in) / Magarrell, D.J. (Autor:in) / Zhang, L. (Autor:in) / Anson, S.A. (Autor:in) / Hasenberg, T.C. (Autor:in) / Boggess, T.F. (Autor:in) / Grein, C.H. (Autor:in)


    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    145224 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    780nm-emitting Al-free Active Region Diode Lasers with Compressively-Strained InGaAsP Quantum Wells

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    M-shaped quantum wells for active region of interband cascade laser

    Ryczko, K. / Sȩk, G. | British Library Online Contents | 2019


    Diode laser based infrared scene projector

    Beasley, D. Brett / Cooper, John B. / Mobley, Scott B. et al. | SPIE | 1995


    Comparison of mid-infrared laser diode active regions [3628-35]

    Olesberg, J. T. / Flatte, M. E. / Brown, B. J. et al. | British Library Conference Proceedings | 1999