Using ultrafast laser pulses, emission of THz radiation from InAs films grown on Si substrates is investigated. THz radiation from the InAs films with different film-thickness are measured in transmission geometry and compared to that of a bulk InAs substrate in the reflection geometry. The strongest THz emission is found from the thickest 520-nm film.


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    Titel :

    Terahertz radiation from InAs film on Si substrate


    Beteiligte:
    Que, C.T. (Autor:in) / Tani, M. (Autor:in) / Edamura, T. (Autor:in) / Nakajima, M. (Autor:in) / Hangyo, M. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    157308 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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