In this paper the device properties of single mode lasers based on this new quantum-dash material will be presented. The laser structures were grown by solid-source MBE. They consist of a 1.7 /spl mu/m top InAlAs cladding and a 400 nm thick waveguide layer, which is based on a graded index separate confinement heterostructure (GRINSCH). Laser ridges with a width of 3 /spl mu/m were defined by photolithography. All the lasers show a very stable single mode emission with side mode suppression ratios (SMSR) well above 45 dB.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Single mode CW operating InP based quantum dash distributed feedback lasers at 1.5 to 1.9 /spl mu/m


    Beteiligte:
    Kaiser, W. (Autor:in) / Legge, M. (Autor:in) / Somers, A. (Autor:in) / Deubert, S. (Autor:in) / Reithmaier, J.P. (Autor:in) / Forchel, A. (Autor:in)


    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    667632 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




    Long wavelength quantum dash lasers grown on InP substrates

    Rotter, T.J. / Stintz, A. / Malloy, K.J. | IEEE | 2003


    InAs/InGaAlAs/InP quantum dash lasers for telecommunication applications

    Gold, D. / Schwertberger, R. / Reithmaier, J.P. et al. | IEEE | 2002


    650mW cw Single-mode Operation of Angled Grating Distributed Feedback Lasers

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995


    Diffraction Limited Single Mode Emission of Photonic Crystal Distributed Feedback Lasers

    Hofmann, H. / Scherer, H. / Deubert, S. et al. | IEEE | 2006