In this report, our recent results of an integrated device are reported. The integrated superluminescent diode (SLD) consisting of an LED/laser diode was fabricated using an AlGaAs SQW heterostructure wafer. A 3 /spl mu/m-wide superluminescent diode with 300-500 /spl mu/m length is aligned with the 3 /spl mu/m-wide input aperture of the tapered amplifier. The amplifier is 1.3-1.5 mm in length and the gain region expands linearly.


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    Titel :

    Monolithic integration of GaAlAs superluminescent diode with the optical amplifier


    Beteiligte:
    Guotong Du (Autor:in) / Yongsheng Zhao (Autor:in) / Xuemei Li (Autor:in) / Junfeng Song (Autor:in) / Weihua Han (Autor:in) / Dingsan Gao (Autor:in) / Shengli Wu (Autor:in) / Devane, G. (Autor:in) / Stair, K.A. (Autor:in) / Chang, R.P.H. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    185283 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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