The performance of 0.25, 0.3 and 0.35 /spl mu/m fully-depleted SOI transistors is characterized between 77 and 300 K. The behavior of device parameters such as drain current, mobility, transconductance, threshold voltage, subthreshold slope, and Early voltage is analyzed. The suitability of sub-micron FD-SOI devices is examined for low temperature operation as encountered in deep space exploration missions. The results indicate significant performance improvements with decreasing temperature down to 100 K. A second effect dominates below this temperature, thus decreasing mobility and leading to other parameter degradations below 100 K.
Performance evaluation of deep sub-micron, fully-depleted silicon-on-insulator (FD-SOI) transistors at low temperatures
2000 IEEE Aerospace Conference. Proceedings (Cat. No.00TH8484) ; 5 ; 415-419 vol.5
2000-01-01
452256 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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