Photoluminescence spectra from single In(Ga)As:Bi quantum dots in a quantum well show low-temperature emission around 1300 nm. We observe the formation of neutral and charged exciton complexes and a large s-p shell splitting.
Electronic shell structure in single InAs/InGaAs quantum dots emitting at 1.3 /spl mu/m
2005 Quantum Electronics and Laser Science Conference ; 2 ; 1067-1069 Vol. 2
01.01.2005
667155 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 2003
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