This study demonstrates and characterizes the performance of all-optical AND and NAND logic gates using InP and GaAs micro-racetrack resonators. Since the switching energy of the device scales down by field enhancement (FE), subpico joule switching energy is predicted, which is required to operate the logic gate at 100 GHz assuming a carrier lifetime of 10 ps and that the microresonator has a moderate FE of 4.


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    Titel :

    Photonic AND/NAND logic gates using semiconductor microresonators


    Beteiligte:
    Ibrahim, T.A. (Autor:in) / Grover, R. (Autor:in) / Kuo, L.-C. (Autor:in) / Kanakaraju, S. (Autor:in) / Calhoun, L.C. (Autor:in) / Ho, P.-T. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    168500 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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