The electrical performance of ultra-thin (300 nm absorber layer) thin-film epitaxial lift-off (ELO) GaAs solar cells, with five different back reflector designs (planar Ag, patterned Ag, patterned ZnS/Ag, textured Ag and textured ZnS/Ag) were compared to identify the most promising reflector design for this type of cell. It was found that cells with patterned ZnS/Ag, textured Ag and textured ZnS/Ag all show an increased short circuit current density (Jsc) and thereby light conversion efficiency compared to cells with a planar Ag reflector, with the best results (15.4% Jsc increase for cells with antireflection coating) obtained for cells with a textured ZnS/Ag reflector. Further improvements to those back reflector designs are necessary, as there is still a significant gap to the Jsc values obtained for cells with a conventionally used thick absorber.


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    Titel :

    Towards High-Efficiency Ultra-Thin GaAs Solar Cells for Space Applications: A Comparative Study of Back Reflector Designs


    Beteiligte:


    Erscheinungsdatum :

    02.10.2023


    Format / Umfang :

    401167 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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