Recently, it has been shown (Witjaksono and Botez, Appl. Phys. Lett., vol. 78, p. 4088, 2001) that DFB/DBR devices with central (grating) phase shift around /spl pi/ fundamentally favor lasing in an orthonormal, single-lobe beam pattern. Here, we present a study of the novel device's intermodal discrimination and efficiency as a function of the grating duty cycle; the optimization of the device for maximum efficiency; and the first experimental realization of a semiconductor grating incorporating a /spl pi/ phase shift. External differential quantum efficiencies as high as 62% can be obtained from devices with 22 cm/sup -1/ threshold gain.
High-efficiency, single-lobe surface-emitting DFB/DBR lasers
01.01.2001
147997 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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