Recently, it has been shown (Witjaksono and Botez, Appl. Phys. Lett., vol. 78, p. 4088, 2001) that DFB/DBR devices with central (grating) phase shift around /spl pi/ fundamentally favor lasing in an orthonormal, single-lobe beam pattern. Here, we present a study of the novel device's intermodal discrimination and efficiency as a function of the grating duty cycle; the optimization of the device for maximum efficiency; and the first experimental realization of a semiconductor grating incorporating a /spl pi/ phase shift. External differential quantum efficiencies as high as 62% can be obtained from devices with 22 cm/sup -1/ threshold gain.


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    Titel :

    High-efficiency, single-lobe surface-emitting DFB/DBR lasers


    Beteiligte:
    Witjaksono, G. (Autor:in) / Li, S. (Autor:in) / Botez, D. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    147997 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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