Narrow bandgap p-i-n dilute nitride GaInNAsSb junctions, for use as bottom cell in 6-junction solar cells, are reported. In particular, we demonstrate a high optical quality for GaInNAsSb junction with a bandgap ~0.78 eV, corresponding to a N content of 6.2%. Under AM0 illumination, such cell exhibits a photocurrent of 36.6 mA/cm2. By extracting the parameters of the experimental cell, we estimate the the AM0 efficiency of a 6-junction multijunction solar cell employing the GaInNAsSb junction, to attain a value of 33%. Further improvements are discussed towards achieving the full potential of the 6-junction design.


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    Titel :

    Narrow Bandgap Dilute Nitride Materials for 6-junction Space Solar Cells


    Beteiligte:
    Isoaho, Riku (Autor:in) / Aho, Arto (Autor:in) / Tukiainen, Antti (Autor:in) / Aho, Timo (Autor:in) / Raappana, Marianna (Autor:in) / Salminen, Turkka (Autor:in) / Reuna, Jarno (Autor:in) / Guina, Mircea (Autor:in)


    Erscheinungsdatum :

    01.01.2019


    Format / Umfang :

    218173 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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