MOSFETs with annular, or enclosed, geometries are now finding frequent use in rad-hard by design (RHBD) approaches to designing custom CMOS ASICs for aerospace applications. Unfortunately, these devices are not accurately modeled by the BSIM3 models normally provided for devices with ordinary rectangular gates. We present a SPICE macro model for an annular n-channel MOSFET to account for the annular geometry effects on gate overlap capacitance and output conductance.


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    Titel :

    SPICE macro models for annular MOSFETs


    Beteiligte:
    Strohbehn, K. (Autor:in) / Martin, M.N. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    512668 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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