This paper proposes a simplified but computationally efficient finite-element approach that reduces the field-transport problem to a DC analysis followed by a guided-wave linearized problem, in which the full-wave EM model presented previously is coupled to the semiconductor transport equations (electron and hole continuity equations for heterostructures including thermionic emission in the drift-diffusion approximation). Photogenerated current in the active region is included in the model introducing a carrier radiative generation term in the continuity equations G = [/spl alpha/(E)/h/spl nu/]P/sub opt/. The complete derivation of the model will be described elsewhere. A nonlinear circuit model of the semiconductor waveguide, to be exploited for circuit- or system-level simulations, can be derived by carrying out the analysis at different DC electrical and optical bias points.


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    Titel :

    Accurate simulation of travelling-wave electroabsorption modulators through a novel coupled electromagnetic and carrier-transport model


    Beteiligte:
    Bertazzi, F. (Autor:in) / Cappelluti, F. (Autor:in) / Bonani, F. (Autor:in) / Ghione, G. (Autor:in)


    Erscheinungsdatum :

    2005-01-01


    Format / Umfang :

    154999 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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    Optical processing with electroabsorption modulators

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