The Department of High-Power Microwave Device in Institute of Electronics, Academia Sinica (IEAS) has developed broad-band klystrons for more than 30 years. In the recent 10 years, various models of high-power broad-band klystron have been studied and manufacturing covering L- and S-band. Typical electrical parameters of these tubes are 1 MW for peak power and 10% for relative bandwidth (-1dB). Most of them have used in military radar systems. In this paper, we give overall consideration of the design of such tubes.


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    Titel :

    Research on broad-band high-gain klystrons of megawatt output power level


    Beteiligte:
    Nu Delu (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    303031 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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