Proposed and demonstrated a novel reflectometry system based on two-photon absorption process in a silicon photodetector. This method can measure the optical path difference of several millimeters to several meters with a simple system configuration. The study on improving the accuracy and resolution is currently under investigation. We also plan to apply the same method to measuring the surface shape of objects using the two-photon absorption of silicon image sensors.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Reflectometry based on two-photon absorption of a silicon avalanche photodiode


    Beteiligte:
    Tanaka, Y. (Autor:in) / Chua, P.G. (Autor:in) / Kurokawa, T. (Autor:in) / Tsuda, H. (Autor:in) / Naganuma, M. (Autor:in) / Takeda, M. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    218301 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch






    The HgCdTe electron avalanche photodiode

    Beck, J.D. / Wan, C.-F. / Kinch, M.A. et al. | IEEE | 2003


    The HgCdTe Electron Avalanche Photodiode

    IEEE | British Library Conference Proceedings | 2003