In this paper, the fabrication, frequency response, and saturation characteristics of a waveguide pin photodiode made from double heterostructure InGaAs/InP materials are presented. The detector is designed for operation at optical wavelengths ranging from 1.3 to 1.5 /spl mu/m. The materials are grown using a low pressure, organo-metallic vapor phase epitaxial reactor. Due to the use of a vent-run manifold and growth interruption at the heterointerface, high quality detector material is obtained.<>
High saturation intensity InGaAs/InP waveguide photodetector
Proceedings of LEOS '93 ; 191-192
01.01.1993
134625 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
High Saturation Intensity InGaAs/InP Waveguide Photodetector
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