In this paper, the fabrication, frequency response, and saturation characteristics of a waveguide pin photodiode made from double heterostructure InGaAs/InP materials are presented. The detector is designed for operation at optical wavelengths ranging from 1.3 to 1.5 /spl mu/m. The materials are grown using a low pressure, organo-metallic vapor phase epitaxial reactor. Due to the use of a vent-run manifold and growth interruption at the heterointerface, high quality detector material is obtained.<>


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    Titel :

    High saturation intensity InGaAs/InP waveguide photodetector


    Beteiligte:
    Kellner, A.L. (Autor:in) / Wiliiams, A.R. (Autor:in) / Jiang, X.S. (Autor:in) / Yu, P.K.L. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    134625 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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