InGaAsP alloys grown lattice matched to InP substrates are widely used for detectors at optical fiber communication wavelengths. For these detectors, the cutoff wavelength is 1.65 /spl mu/m as determined by the band gap of the lattice-matched In/sub 0.53/Ga/sub 0.47/As absorption layer. Detectors with In content larger than 53% have been fabricated, but exhibit higher dark currents due to defects in the relaxed, lattice-mismatched InGaAs layer. Recently, we demonstrated that incorporation of nitrogen into InGaAs may extend the wavelength of InP based photodetectors beyond 1.65 /spl mu/m. We report the first lattice matched InGaAsPN based photodetectors on InP with cutoff wavelengths extending to >1.89 /spl mu/m. In the study, a mesa PIN type photodetector structure with narrow band gap InGaAsPN as the absorption layer was grown on an n-type InP substrate by gas source molecular beam epitaxy (GSMBE).
InGaAsPN/InP based photodetectors for long wavelength (/spl lambda/>1.65 /spl mu/m) applications
01.01.1999
149497 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
InGaAsPN/InP Based Photodetectors for Long Wavelength (Lambda > 1.65mum) Applications
British Library Conference Proceedings | 1999
|British Library Conference Proceedings | 1999
|Ultra-wide-band long-wavelength photodetectors
British Library Online Contents | 1996
|