The authors theoretical and experimental results show that they can accurately predict the performance of semiconductor laser amplifiers that contain separate compressive and tensile wells and hence design devices which are polarisation-independent. They also show that the gain of a combined tensile and compressive quantum well device is not simply a linear combination of the gains from individual layers, as has been previous thought. Modelling of carrier redistribution between the quantum wells in the whole structure can be crucial for accurate design of polarisation-independent operation.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Modelling of long wavelength polarisation-insensitive semiconductor laser amplifiers containing tensile and compressive wells


    Beteiligte:
    Silver, M. (Autor:in) / Greene, P.D. (Autor:in) / Collar, A.J. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    220576 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Modelling of Long Wavelength Polarisation-insensitive Semiconductor Laser Amplifiers Containing Tensile and Compressive Wells

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    Polarization-Insensitive Optical Amplifiers Using Tensile-Strained Quantum Wells

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993


    Polarization-insensitive optical amplifiers using tensile-strained quantum wells

    Kamijoh, T. / Horikawa, H. / Nakajima, M. et al. | IEEE | 1993


    Wavelength insensitive compact bimodal polarisation converter on InP

    Pedersen, J. W. / Van der Tol, J. J. G. M. / Hakimzadeh, F. et al. | British Library Conference Proceedings | 1997