This paper summarizes some of the milestones in the development of high power microwave amplifiers (HPAs), above 1 GHz, in the past 10 years. It is concerned primarily with amplifiers using gallium arsenide (GaAs) field effect transistors (FETs) and monolithic microwave integrated circuits (MMICs) since these devices have enabled the design of HPAs that have been evolutionary in terms of power levels, bandwidths, and efficiencies that are still not possible using silicon devices.


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    Titel :

    Evolution of high power solid-state microwave amplifiers


    Beteiligte:
    Endler, H.M. (Autor:in) / Madai, A.M. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    800028 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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