We have previously demonstrated an intra-cavity frequency doubled optically pumped vertical external cavity surface emitting laser (VECSEL) based on a top emitting epitaxial structure. In this paper we report on a similar device, an InGaAs MQW VECSEL that is electrically-injected and bottom emitting. The bottom emitting structure allows for better current spreading and more efficient heat extraction from the active region at the expense of increased intracavity absorption from the substrate region.


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    Titel :

    Intracavity frequency-doubled electrically-injected VECSEL


    Beteiligte:
    Esherick, P. (Autor:in) / Serkland, D.K. (Autor:in) / Geib, K.M. (Autor:in) / Peake, G.M. (Autor:in) / Crawford, M.H. (Autor:in) / Alford, W.J. (Autor:in) / Allerman, A.A. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    193591 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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