The gain saturation coefficient c in InGaAsIAIGaAs strained layer quantum well lasers is the oretically analyzed by taking into account the effect of strain on the intra-su&band relaxation time. It is demonstrated that the gain saturation coefficient increases with compressive strain in the active layer of quantum wells due to an increase of the intra-subband relaxation time.
Theoretical analysis of gain saturation coefficients in InGaAs/AlGaAs strained layer quantum well lasers (SL-QWLs)
1992-01-01
172886 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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