The gain saturation coefficient c in InGaAsIAIGaAs strained layer quantum well lasers is the oretically analyzed by taking into account the effect of strain on the intra-su&band relaxation time. It is demonstrated that the gain saturation coefficient increases with compressive strain in the active layer of quantum wells due to an increase of the intra-subband relaxation time.


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    Titel :

    Theoretical analysis of gain saturation coefficients in InGaAs/AlGaAs strained layer quantum well lasers (SL-QWLs)


    Beteiligte:
    Seki, S. (Autor:in) / Sotirelis, P. (Autor:in) / Hess, K. (Autor:in)


    Erscheinungsdatum :

    1992-01-01


    Format / Umfang :

    172886 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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