An optimum design of a low noise amplifier (LNA) in S microwave band working at 2-4GHz is described in this paper. Choosing FHC40LG HEMT (High Electronic Mobility Transistor), the noise factor of the designed amplifier simulated by Microwave Office is no more than 1.5dB, meanwhile the gain is no less than 20dB in the given bandwidth. The simulated results agree with the performance of the transistor itself well considering its own minimum noise factor (0.3dB) and associated gain (15.5dB). Simultaneously, the stability factor of the designed amplifier is no less than 1 in the given bandwidth.
The Optimum Design of A Broad Band Low Noise Amplifier
01.09.2006
917074 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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