An optimum design of a low noise amplifier (LNA) in S microwave band working at 2-4GHz is described in this paper. Choosing FHC40LG HEMT (High Electronic Mobility Transistor), the noise factor of the designed amplifier simulated by Microwave Office is no more than 1.5dB, meanwhile the gain is no less than 20dB in the given bandwidth. The simulated results agree with the performance of the transistor itself well considering its own minimum noise factor (0.3dB) and associated gain (15.5dB). Simultaneously, the stability factor of the designed amplifier is no less than 1 in the given bandwidth.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    The Optimum Design of A Broad Band Low Noise Amplifier


    Beteiligte:
    Gao, Xinyan (Autor:in) / Xie, Wenkai (Autor:in)


    Erscheinungsdatum :

    01.09.2006


    Format / Umfang :

    917074 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    1.58-mum Broad-Band Erbium-Doped Tellurite Fiber Amplifier

    Mori, A. / Sakamoto, T. / Kobayashi, K. et al. | British Library Online Contents | 2002


    Low-Noise Band-Pass Amplifier

    Kleinberg, L. | NTRS | 1982



    Axial flow fan broad-band noise and prediction

    Carolus, Thomas | Online Contents | 2007


    Design, fabrication & testing of Low Noise Amplifier at Ku-Band

    Shoaib, Nosherwan / Ahmad, Mujeeb / Mahmood, Iftekhar | IEEE | 2008