High power semiconductor laser diodes have many applications including satellite communications, printing, frequency doubling, and spectroscopy. Recent advances in the development of monolithically integrated master oscillator power amplifier configurations have resulted in the demonstration of single mode operation to output power in excess of 3 W CW. As a result the application of diode lasers to a greater variety of systems has begun and new applications are being raised which take advantage of the small size, efficient operation, and potential low cost. In this paper the characteristics of the M-MOPA architecture will be discussed.<>


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    Titel :

    High power, diffraction limited laser diodes


    Beteiligte:
    Welch, D.F. (Autor:in) / Parke, R. (Autor:in) / O'Brien, S. (Autor:in) / Dzurko, K. (Autor:in) / Mehuys, D. (Autor:in) / Lang, R. (Autor:in) / Osinski, J. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    99306 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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