The experimental results of the fabricated LEDs with /spl sim/22/spl deg/ undercut side walls are reported and the performance of the fabricated undercut side wall LEDs show /spl sim/70 % enhancement in the light output. Nitride-based LEDs were achieved by controllable inductively coupled plasma reactive ion etching (ICP-RIE).
InGaN-based light-emitting diode with undercut-side wall
2004-01-01
133553 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
InGaN-based Light-Emitting Diode with Undercut Side Wall
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