The experimental results of the fabricated LEDs with /spl sim/22/spl deg/ undercut side walls are reported and the performance of the fabricated undercut side wall LEDs show /spl sim/70 % enhancement in the light output. Nitride-based LEDs were achieved by controllable inductively coupled plasma reactive ion etching (ICP-RIE).


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    Titel :

    InGaN-based light-emitting diode with undercut-side wall


    Beteiligte:
    Chih-Chiang Kao, (Autor:in) / Chu, J.T. (Autor:in) / Huang, H.W. (Autor:in) / Peng, Y.C. (Autor:in) / Yu, C.C. (Autor:in) / Hseih, Y.L. (Autor:in) / Lin, C.F. (Autor:in) / Kuo, H.C. (Autor:in) / Wang, S.C. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    133553 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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