In this paper we present a description and evaluation of commercial foundry Gallium Nitride (GaN) RF HEMTs as power switches in high frequency switching circuits. The switches are used within the multifunctional blocks for a system-on-chip of the front-end of a pulsed VHF radar. The GaN power switches are evaluated in a voltage mode Class-D (VMCD) RF amplifier and as a DC-DC converter. The power switches and its associated drivers are designed in a 0.25 µm commercially available RF GaN process technology. The efficiency of the circuit when evaluated as a Class D power amplifier (PA) is 74.5% at 250 MHz and delivers an output power of 39.5 dBm. The measured DC-DC converter circuit has an efficiency of over 92.4% at 100 MHz, delivering 40.8 dBm. These are the highest reported efficiencies for the RF PA and the switching modulator at its respective operating frequencies.
Integrated GaN Power Switches for Pulsed PAs and Switching Power Conversion Applications
2020-03-01
3039298 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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