Vanadium dioxide (VO2) thin films have unique insulator to metal transition above the critical temperature of 72 °C. In this research, VO2 thin films were deposited on a sapphire substrate for thermally controllable RF/microwave switching devices with integrated heating coil. The VO2 thin film based devices showed insulator performance at room temperature and metallic state (low resistive phase) at 80 °C. Switching devices designed using a VO2 series varistor showed good isolation (< −30 dB) and low insertion loss (> −5 dB) up to 20 GHz.


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    Titel :

    Vanadium dioxide thin film series single-pole single throw switch


    Beteiligte:
    Pan, KuanChang (Autor:in) / Freeman, Kelvin (Autor:in) / Brown, Dustin (Autor:in) / Shin, Eunsung (Autor:in) / Wang, Weisong (Autor:in) / Subramanyam, Guru (Autor:in)


    Erscheinungsdatum :

    01.06.2014


    Format / Umfang :

    909896 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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