Optical models for simulating light extraction efficiency of an GaN-based LED chip is presented. We propose to introduce a periodic sharpening structure on the interface between the sapphire and the n-GaN of a GaN-based LED to obtain as high as 73% in light extraction efficiency.


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    Titel :

    Enhancement of light extraction of GaN-based LED with introducing microstructure array


    Beteiligte:
    Chao-Ying Lin, (Autor:in) / Tsung-Xian Lee, (Autor:in) / Shi-Xin Ma, (Autor:in) / Ching-Cherng Sun, (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    50028 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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