Optical models for simulating light extraction efficiency of an GaN-based LED chip is presented. We propose to introduce a periodic sharpening structure on the interface between the sapphire and the n-GaN of a GaN-based LED to obtain as high as 73% in light extraction efficiency.
Enhancement of light extraction of GaN-based LED with introducing microstructure array
2003-01-01
50028 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Enhancement of light extraction of GaN-based LED with introducing micro-structure array
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